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| CYStech Electronics Corp. General Purpose PNP Digital Transistors (Built-in Resistors) Spec. No. : C254S3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 1/3 DTA114TS3 Features * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. * Only the on/off conditions need to be set for operation, making device design easy. * Complements the DTC114TS3 Equivalent Circuit DTA114TS3 SOT-323 R1=10 k BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC (Max) Pd Tj Tstg Limits -50 -50 -5 -100 200 150 -55~+150 Unit V V V mA mW C C DTA114TS3 CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol VCBO VCEO VEBO ICBO IEBO VCE(sat) hFE R fT Min. Typ. Max. Unit -50 -50 -5 100 7 0.1 10 250 -0.5 -0.5 -0.3 V V V uA uA V Spec. No. : C254S3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 2/3 Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-50V VEB=-4V IC=-10mA, IB=-1mA 600 VCE=-5V, IC=-1mA 13 k MHz VCE=-10V, IE=-5mA, f=100MHz* * Transition frequency of the device Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE 100 100 HFE@VCE=5V 10 0.1 1 10 100 Collector Current---IC(mA) VCE(SAT)@IC=10IB 10 1 10 Collector Current---IC(mA) 100 PD - Ta 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta( ) DTA114TS3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension 3 A Spec. No. : C254S3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 3/3 Marking: A1 Q Lp detail Z W B C 1 e1 e D bp 2 TE 6E E A Z He 0 1 scale 2 mm 3-Lead SOT-323 Pastic Surface Mounted Package CYStek Package Code: S3 v A Style: Pin 1.Base 2.Emitter 3.Collector *: Typical DIM A A1 bp C D E e Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10 0 Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 27.002. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTA114TS3 CYStek Product Specification |
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